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A Product Line of
Diodes Incorporated
DMN6066SSD
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
60
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 2)
(Note 9)
(Note 9)
V GS
E AS
I AS
± 20
37.5
5.0
V
mJ
A
(Note 4)
4.4
Continuous Drain current
V GS = 10V
T A = 70°C (Note 4)
I D
3.5
A
(Note 3)
3.3
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
17.0
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
3.2
17.0
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
(Notes 3 & 6)
Symbol
Value
1.25
10
Unit
Power dissipation
Linear derating factor
(Notes 3 & 7)
P D
1.8
14.3
W
mW/ ° C
(Notes 4 & 6)
(Notes 3 & 6)
2.14
17.2
100
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 3 & 7)
(Notes 4 & 6)
(Notes 6 & 8)
R θ JA
R θ JL
T J , T STG
70
58
55
-55 to 150
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ± 16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
6. For a dual device with one active die.
7. For a device with two active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25 ? , V DD = 50V, starting T J = 25°C.
DMN6066SSD
Document Number DS32109 Rev 3 - 2
2 of 9
www.diodes.com
December 2011
? Diodes Incorporated
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